Part Number Hot Search : 
STA3350 T421004 0N08S 5KP20 LC46A 29312 B0505 BF494
Product Description
Full Text Search
 

To Download BPW77NA Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 BPW77NA, BPW77NB
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
FEATURES
* Package type: leaded * Package form: TO-18 * Dimensions (in mm): O 4.7 * High photo sensitivity * High radiant sensitivity * Suitable for visible and near infrared radiation
94 8401
* Fast response times * Angle of half sensitivity: = 10 * Base terminal connected
DESCRIPTION
BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and glass lens. It is sensitive to visible and near infrared radiation.
* Hermetically sealed package * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with
APPLICATIONS
* Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT BPW77NA BPW77NB Note Test condition see table "Basic Characteristics" Ica (mA) 7.5 to 15 > 10 (deg) 10 10 0.1 (nm) 450 to 1080 450 to 1080
ORDERING INFORMATION
ORDERING CODE BPW77NA BPW77NB Note MOQ: minimum order quantity PACKAGING Bulk Bulk REMARKS MOQ: 1000 pcs, 1000 pcs/bulk MOQ: 1000 pcs, 1000 pcs/bulk PACKAGE FORM
TO-18 TO-18
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Total power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Thermal resistance junction/gase Note Tamb = 25 C, unless otherwise specified t5s Connected with Cu wire, 0.14 mm2 tp/T = 0.5, tp 10 ms Tamb 25 C TEST CONDITION SYMBOL VCBO VCEO VEBO IC ICM PV Tj Tamb Tstg Tsd RthJA RthJC VALUE 80 70 5 50 100 250 125 - 40 to + 125 - 40 to + 125 260 400 150 UNIT V V V mA mA mW C C C C K/W K/W
www.vishay.com 402
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81527 Rev. 1.5, 08-Sep-08
BPW77NA, BPW77NB
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
800
Ptot - Total Power Dissipation (mW)
600 RthJC
400
200 RthJA 0 0 25 50 75 100 125 150
94 8342
Tamb - Ambient Temperature (C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Turn-on time Turn-off time Cut-off frequency Note Tamb = 25 C, unless otherwise specified Ee = 1 mW/cm2, = 950 nm, IC = 1 mA TEST CONDITION IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 SYMBOL V(BR)CEO ICEO CCEO p 0.1 VCEsat ton toff fc MIN. 70 1 6 10 850 450 to 1080 0.15 6 5 110 0.3 100 TYP. MAX. UNIT V nA pF deg nm nm V s s kHz
VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100
TYPE DEDICATED CHARACTERISTICS
PARAMETER Collector light current TEST CONDITION Ee = 1 mW/cm2, PART SYMBOL Ica Ica MIN. 7.5 10 TYP. MAX. 15 UNIT mA mA = 950 nm, BPW77NA VCE = 5 V BPW77NB
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
10 6 I CEO - Collector Dark Current (nA) 10 5 10 4 10 3 10 2 10 1 10 0 20
94 8343
2.50
I ca rel - Relative Collector Current
2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 0
VCE = 5V E e = 1 mW/cm2 = 950 nm
V CE = 20 V E=0
50
100
150
94 8344
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C)
Tamb - Ambient Temperature (C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature Document Number: 81527 Rev. 1.5, 08-Sep-08
Fig. 3 - Relative Collector Current vs. Ambient Temperature www.vishay.com 403
For technical questions, contact: detectortechsupport@vishay.com
BPW77NA, BPW77NB
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant
100 ton/toff - Turn-on/Turn-off Time (s) Ica - Collector Light Current (mA) BPW77NB 10
12 10 8 6
ton
VCE = 5 V RL = 100 = 950 nm
1
BPW77NA
4 2 0
toff
0.1 V CE = 5 V = 950 nm 0.01 0.01 0.1 1 10
0
4
8
12
16
94 8349
Ee - Irradiance (mW/cm2)
94 8253
IC - Collector Current (mA)
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
10
Ica - Collector Light Current (mA)
= 950 nm
Ee = 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2
S ()rel - Relative Spectral Sensitivity
100
1.0 0.8 0.6 0.4 0.2 0 400 600 800 1000 - Wavelength (nm)
1
0.1 mW/cm2 0.05 mW/cm2
0.02 0.1 0.1 1
mW/cm2 10
94 8350
V CE - Collector Emitter Voltage (V)
94 8348
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
CCEO - Collector Ermitter Capacitance (pF)
20
0
10
20 30
Srel - Relative Sensitivity
16
f = 1 MHz
40 1.0 0.9 0.8 0.7 50 60 70 80
12
8
4 0 0.1 1 10 100
0.6
94 8351
0.4
0.2
0
0.2
0.4
0.6
94 8247
VCE - Collector Ermitter Voltage (V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
www.vishay.com 404
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81527 Rev. 1.5, 08-Sep-08
BPW77NA, BPW77NB
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
B
E
C
O 4.69
Chip position
(2.5)
6.15
0.25
+ 0.02 - 0.07
0.45
+ 0.02 - 0.05
13.2
0.7
5.5
0.15
2.54 nom.
technical drawings according to DIN specifications
Lens
0.05
Drawing-No.: 6.503-5023.01-4 Issue:1; 01.07.96
96 12180
4
Document Number: 81527 Rev. 1.5, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com 405
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com 1


▲Up To Search▲   

 
Price & Availability of BPW77NA

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X